?2002 fairchild semiconductor corporation rev. a2, august 2002 bc817/bc818 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v ces collector emitter voltage : bc817 : bc818 50 30 v v v ceo collector emitter voltage : bc817 : bc818 45 25 v v v ebo emitter-base voltage 5 v i c collector current (dc) 800 ma p c collector power dissipation 310 mw t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage : bc817 : bc818 i c =10ma, i b =0 45 25 v v bv ces collector-emitter breakdown voltage : bc817 : bc818 i c =0.1ma, v be =0 50 30 v v bv ebo emitter-base breakdown voltage i e =0.1ma, i c =0 5 v i ces collector cut-off current v ce =25v, v be =0 100 na i ebo emitter cut-off current v eb =4v, i c =0 100 na h fe1 h fe2 dc current gain v ce =1v, i c =100ma v ce =1v, i c =300ma 100 60 630 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 0.7 v v be (on) base-emitter on voltage v ce =1v, i c =300ma 1.2 v f t current gain bandwidth product v ce =5v, i c =10ma f=50mhz 100 mhz c ob output capacitance v cb =10v, f=1mhz 12 pf bc817/bc818 switching and amplifier applications ? suitable for af-driver stages and low power output stages ? complement to bc807/bc808 sot-23 1. base 2. emitter 3. collector 1 2 3
?2002 fairchild semiconductor corporation rev. a2, august 2002 bc817/bc818 h fe classification marking code classification 16 25 40 h fe1 100 ~ 250 160 ~ 400 250 ~ 630 h fe2 60 ~ 100 ~ 170 ~ type 817-16 817-25 817-40 818-16 818-25 818-40 marking 8fa 8fb 8fc 8ga 8gb 8gc
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package dimensions bc817/bc818 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a2, august 2002
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